bc 847bt nov-03-1999 1 npn silicon af transistors ? for af input stages and driver applications ? high current gain ? low collector-emitter saturation voltage ? complementary types: bc 857bt vps05996 1 2 3 type marking pin configuration package bc 847bt 1fs 1 = b 2 = e 3 = c sc-75 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 45 v collector-base voltage v cbo 50 collector-emitter voltage v ces 50 emitter-base voltage v ebo 6 dc collector current i c ma 100 200 peak collector current i cm total power dissipation , t s = 115 c p tot 250 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance junction ambient 1) r thja 275 k/w junction - soldering point r thjs 140 k/w 1) package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bc 847bt nov-03-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol unit values min. max. typ. dc characteristics v (br)ceo collector-emitter breakdown voltage i c = 10 ma, i b = 0 45 - - v v (br)cbo 50 - collector-base breakdown voltage i c = 10 a, i b = 0 - v (br)ces 50 - - collector-emitter breakdown voltage i c = 10 a, v be = 0 v (br)ebo emitter-base breakdown voltage i e = 1 a, i c = 0 6 - - i cbo - collector cutoff current v cb = 30 v, i e = 0 15 - na i cbo - - a collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c 5 h fe dc current gain 1) i c = 10 a, v ce = 5 v - 250 - - h fe dc current gain 1) i c = 2 ma, v ce = 5 v 290 200 450 mv v cesat - - collector-emitter saturation voltage1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma 90 200 250 600 base-emitter saturation voltage 1) i c = 100 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma 700 900 - - - - v besat base-emitter voltage 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 580 - 660 - 700 770 1) pulse test: t < 300 s; d < 2%
bc 847bt nov-03-1999 3 electrical characteristics at t a = 25 c, unless otherwise specified. parameter values symbol unit max. typ. min. ac characteristics mhz transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz f t - - 250 - collector-base capacitance v cb = 10 v, f = 1 mhz pf c cb 1.5 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz - 11 c eb - short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz h 11e - 4.5 - k ? open-circuit reverse voltage transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 12e - 2 - 10 -4 short-circuit forward current transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 21e - 300 - - open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz h 22e - 30 - s
bc 847bt nov-03-1999 4 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bc 847bt nov-03-1999 5 collector-base capacitance c cb = f ( v cb ) emitter-base capacitance c eb = f ( v eb ) 10 -1 10 0 10 1 v v cb , v eb 0 2 4 6 8 10 pf 14 c cb , c eb c eb c cb transition frequency f t = f ( i c ) v ce = 5v 10 10 10 10 ehp00363 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c collector cutoff current i cbo = f ( t a ) v cb = 30v 10 0 50 100 150 ehp00381 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 20 10 0 ehp00367 v cesat 10 ma 10 c 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c
bc 847bt nov-03-1999 6 dc current gain h fe = f ( i c ) v ce = 5v 10 10 10 10 ehp00365 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c base-emitter saturation voltage i c = f (v besat ), h fe = 20 0 10 ehp00364 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c
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